Photovoltaic device with layer region containing germanium therin
US5279681A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1992 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Feb 20, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device having a semiconductor body with a pin junction, with reduced time-dependent deterioration, high reliability and a high photoelectric conversion efficiency is disclosed. An i-type semiconductor layer constituting the semiconductor body is composed of a layer having a region containing germanium and at least one region not containing germanium. The at least one region not containing germanium is provided at least at the side of a p-semiconductor layer. The maximum composition ratio of germanium in the region containing amorphous silicon and germanium is within a range from 20 to 70 at. %, and the composition ratio of germanium in the above-mentioned region containing amorphous silicon and germanium is zero at the side of an n-semiconductor layer and increases toward the side of the p-semiconductor layer, with the rate of increase being larger at the side of the n-semiconductor layer than at the side of p-semiconductor layer, and the composition ratio of germanium at the center of the i-layer thickness is at least equal to 75 at. % of the maximum composition ratio of germanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.