Process for forming low resistivity titanium nitride films
US5279857A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1991 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Aug 16, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/56
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for forming low resistivity titanium nitride films on a silicon substrate by chemical vapor deposition includes a post-deposition ammonia anneal to provide hydrogen atoms which chemically react with chlorine atoms entrained within the titanium nitride film. The titanium nitride film is deposited by placing the silicon substrate in a reaction chamber, heating the silicon substrate within the reaction chamber, initially passing both TiCl.sub.4 gas and NH.sub.3 gas into the reaction chamber over the silicon substrate to deposit titanium nitride upon a surface of the silicon substrate, and thereafter discontinuing the flow of TiCl.sub.4 gas while continuing to pass NH.sub.3 gas into the reaction chamber over the silicon substrate to react with and remove residual chlorine atoms retained by the deposited titanium nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.