Planar PV HgCdTe DLHJ fabricated by selective cap layer growth
US5279974A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 24, 1992 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Jul 24, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/222
Abstract
A photodiode (10) fabricated in accordance with the method of the invention includes a substrate (11) and a semiconductor base region (12) overlying the substrate. The base region is comprised of Group IIB-VIA material and has a first type of electrical conductivity. A passivation layer (16) overlies the base region and is also comprised of Group IIB-VIA material. A dielectric layer (18) at least partially overlies the passivation layer. During fabrication the dielectric layer functions as an etch stop during a removal of excess cap material, the remaining cap material forming a cap region (14) within an opening that is etched through the dielectric layer and the passivation layer. The cap region is also comprised of Group IIB-VIA material, has a second type of electrical conductivity, and forms a heterojunction (14a) with the base region. An electrically conductive contact pad (20) and an electrically conductive interconnect, preferably an indium bump (22), are formed upon the cap region. The topside surface of the photodiode is substantially planar, and the indium bump may be made significantly larger than the area of an underlying photodetector unit cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.