Semiconductor device and method of fabrication thereof
US5279985A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 15, 1992 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Sep 15, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/163
Abstract
The present invention relates to a semiconductor device and a method of fabrication of the same, said semiconductor device including a capacitive structure comprising of a lower layer electrode consisting of a silicon material, a capacitive insulating film consisting of a tantalum oxide film and an upper layer electrode, said upper layer electrode comprising at least a titanium nitride film for covering said capacitive insulating film. Said method of fabrication comprises the steps of: forming the lower layer electrode; forming the capacitive insulating film for covering said lower layer electrode; and forming the titanium nitride film for covering said capacitive insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.