Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
US5280156A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1991 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Dec 23, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer heating apparatus can be obtained which prevents formation of a local gap caused by deflection or distortion, and the like, of a wafer at the time of heating the wafer so as to improve production yield of the heat treatment of the wafers. The apparatus includes a ceramic substrate, a heat generating resistive element embedded in the ceramic substrate, a film electrode formed on a front surface of the ceramic substrate, and a ceramic dielectric layer formed on the front surface of the ceramic substrate to coat the film electrode. A direct current power source is provided to generate Coulomb's force between the wafer and the film electrode via the dielectric layer to attract the wafer to a wafer-attracting surface of the dielectric layer, while heating the wafer attracted to the wafer-attracting surface by energizing the heat generating element through application of an electric current therethrough. A method of producing the wafer heating apparatus is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.