Multi-dimensional memory cell using resonant tunneling diodes
US5280445A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1992 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Sep 3, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5614
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A number of resonant tunneling diodes are connected in series with a resistor, a current source or a load device. A bit line is connected to every joint between any two devices through a switch. When properly biased, there can be (N+1).sup.m number of stable quantized operating points which are represented by a combination of m variables (of either voltage or current, where N is the number of peaks of the folding I-V characteristic and m is the number of bit lines. The m bit lines can write in (N+1).sup.m different combinations of inputs. During reading, the quantized voltage (or current) at each bit line is sensed. The number of stable states can be doubled by changing the polarity of the power supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.