Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same
US5280492A · kind A · utility
10Cited by
0References
32Claims
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Assignee
Inventors
Key dates
| Filing date | Nov 15, 1991 |
| Grant date | Jan 18, 1994 |
| Priority date | — |
| Expiry date | Nov 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1618
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises Ytterbium doped apatite (Yb:Ca.sub.5 (PO.sub.4).sub.3 F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.