Group III-V compound crystal article using selective epitaxial growth
US5281283A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1992 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Dec 4, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a III-V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.