Process for manufacturing integrated optical components using silicon mask
US5281303A · kind A · utility
53Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1992 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Sep 10, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/1345
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for the production of an integrated optical circuit in a glass body by ion exchange between certain regions of the glass body and a metallic salt with the use of a mask defining the regions where the ion exchange occurs, wherein the mask comprises a layer of silicon and the mask is removed by an etching operation preceded by a cleansing operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.