Semiconductor sensor with perpendicular N and P-channel MOSFET's
US5281836A · kind A · utility
9Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1992 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Apr 9, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B3/48
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to sensors having field effect semiconductors. The sensor of the invention comprises a ring oscillator constituted by an odd number of CMOS inverters disposed in a zone sensitive to the physical property to be measured. In order to increase the sensitivity of the sensor, the N channel of the NMOS transistor in each CMOS inverter is disposed perpendicularly to the P channel of the PMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.