Semiconductor device having a short gate length
US5281839A · kind A · utility
11Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1993 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Apr 23, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a channel region having a first and a second portion. The first and second portions of the channel region are designed so that only a small portion is substantially depleted during operation. Thus, a semiconductor device having a short gate length is fabricated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.