PTCR device
US5281845A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1993 |
| Grant date | Jan 25, 1994 |
| Priority date | — |
| Expiry date | Feb 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/021
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of making a positive temperature coefficient of resistance (PTCR) device,and the PTCR device itself, where there is provided a ferroelectric semiconductor having a Curie point and a bulk resistance. A layer of electrically conducting material is provided upon the ferroelectric semiconductor. The layer is heated at a process temperature greater than the Curie point of the ferroelectric semiconductor for a period of time. End cooled to ambient temperature. The process temperature and time period are selected to be sufficient to provide an ambient layer resistance greater than the bulk resistance of the ferroelectric semiconductor. The layer may be heated in an oxidizing atmosphere or in a reducing atmosphere which also affects the layer resistance. The ferroelectric semiconductor may be in the form of an oxide ceramic or liquid crystals, and may include barium titanate. The layer may be selected from the group consisting of metal, metal alloys, metal oxides, polymers, and composites thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.