Photoconductive material and photosensor employing the photoconductive material
US5283207A · kind A · utility
5Cited by
4References
8Claims
0Family size
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Key dates
| Filing date | Jun 10, 1992 |
| Grant date | Feb 1, 1994 |
| Priority date | — |
| Expiry date | Jun 10, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.