Monolithic infrared detector with pyroelectric material
US5283438A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 11, 1991 |
| Grant date | Feb 1, 1994 |
| Priority date | — |
| Expiry date | Dec 11, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N15/10
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Infrared detectors whose detecting part consists of a layer of pyroelectric material deposited on a semiconductive substrate are disclosed. The object is to facilitate the polarization of the layer of pyroelectric material after it is deposited on the semiconductive substrate. The detector of the invention includes a semiconductive substrate (15) carrying a layer of pyroelectric material (11) in which are defined zones, each corresponding to a pixel (P1 to P9). Each pyroelectric zone is defined by an electrode known as lower electrode (EI 1 to EI 9), in contact with a face of pyroelectric layer (11) oriented toward substrate (15). According to a characteristic of the invention, a diode known as polarization diode (DP) is formed in substrate (15) for each pixel (P1 to P9). The polarization diode is connected to lower electrode (EI 1 to EI 9) to make possible the passage of a current between substrate (15) and the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.