Temperature stable semiconductor bulk acoustic resonator
US5283458A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1992 |
| Grant date | Feb 1, 1994 |
| Priority date | — |
| Expiry date | Mar 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/172
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This invention discloses a semiconductor bulk acoustic resonator including at least one thin film piezoelectric layer positioned on a semiconductor substrate. The acoustic resonator includes a heating ring positioned around the outer perimeter of the piezoelectric layer in order to heat the piezoelectric layer to a desirable elevated temperature. A heat sensing film fabricated on the piezoelectric layer monitors the temperature of the piezoelectric layer such that the heating ring maintains the piezoelectric layer at a constant temperature. By this, an oscillator circuit using this semiconductor bulk acoustic resonator as the frequency controlling element can maintain a constant frequency over a wide range of temperatures which may affect frequency stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.