One-time-programmable EEPROM cell
US5283759A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 18, 1992 |
| Grant date | Feb 1, 1994 |
| Priority date | — |
| Expiry date | Jun 18, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0433
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a one-time-programmable read-only memory cell, abbreviated as PROM. According to the prior art, PROM cells are programmed by the deliberate destruction of a component. Since the information is burnt into the memory cell in this way, a PROM cell can only be programmed once. If read-only memory cells are to be electrically programmed and cleared several times, floating gate transistors in particular are used. With the floating gate transistor, the information is stored as a charge on a completely insulated gate electrode. If PROM and EEPROM memory cells are now integrated on a common chip, this requires additional circuitry due to the different voltage requirements of the two different memory cells. In accordance with the invention, a repeatedly electrically programmable read-only memory is connected such that it can only be electrically programmed once.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.