Inverted diffuser stagnation point flow reactor for vapor deposition of thin films
US5284519A · kind A · utility
517Cited by
11References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 16, 1991 |
| Grant date | Feb 8, 1994 |
| Priority date | — |
| Expiry date | May 16, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to a novel inverted diffuser stagnation point flow reactor which can be used for vapor deposition of thin solid films on substrates. A metalorganic chemical vapor deposition reactor comprising a gas mixing chamber with gas entry ports into the mixing chamber; a substrate for deposition thereon of solid film; and a gas outlet for conveying gas away from the substrate, characterized by a capillary plug positioned at the base of an inverted diffuser between the mixing chamber and the substrate, the capillary plug serving to streamline the flow of gas to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.