Method of making semiconductor device using a trimmable thin-film resistor
US5284794A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1992 |
| Grant date | Feb 8, 1994 |
| Priority date | — |
| Expiry date | Oct 13, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
Abstract
A semiconductor device has a thin-film resistor trimmed by laser. The semiconductor device comprises a semiconductor substrate having an element region that covers at least part of the surface of the semiconductor substrate, a first insulation film disposed on the surface of the semiconductor substrate, and a second insulation film disposed on the surface of the semiconductor substrate through an opening of the first insulation film. The opening is formed by selectively removing at least part of the first insulation film at a location on the surface of the semiconductor substrate where the element region is not involved. The thin-film resistor is formed on the second insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.