Method for producing CVD diamond film substantially free of thermal stress-induced cracks
US5286524A · kind A · utility
29Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1991 |
| Grant date | Feb 15, 1994 |
| Priority date | — |
| Expiry date | Dec 13, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S427/103
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chemical vapor deposition method for producing a diamond film substantially free of thermal stress-induced cracks in which diamond growth occurs on both sides of a thin substrate so that two diamond coatings with identical opposing tensile forces are formed on each side of the substrate at a thickness greater than the thickness of the thin substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.