Microstructure design for high IR sensitivity
US5286976A · kind A · utility
117Cited by
1References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 7, 1988 |
| Grant date | Feb 15, 1994 |
| Priority date | — |
| Expiry date | Nov 7, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N19/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microstructure design for high IR sensitivity having a two level infrared bolometer microstructure, the lower level having a reflective metal film surface such as Pt, Au, or Al to reflect IR penetrating to that level, the upper level being separated from the lower level by an air gap of about 1-2 microns which allows the reflected IR to interfere with the incident IR and increase the sensitivity to a higher level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.