Semiconductor device having CCD and its peripheral bipolar transistors

US5286986A · kind A · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Kazuo Kihara · Tokyo, JP
• Minoru Taguchi · Yokohama, JP

Key dates

• Filing date: Feb 18, 1992
• Grant date: Feb 15, 1994
• Expiry date: Feb 18, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/82

Abstract

In a semiconductor device, a charge transfer device, a bipolar transistor, and a MOSFET are formed on a single chip, and the peripheral portion of the charge transfer device is surrounded by an N.sup.+ -type region. Since the charge transfer device block is surrounded by the N.sup.+ -type region and the N.sup.+ -type buried layer, leaked charge of clocks from the charge transfer device is absorbed by the N.sup.+ -type region and the N.sup.+ -type buried layer.