Circuit for measuring current in a power MOS transistor
US5287055A · kind A · utility
29Cited by
4References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 7, 1991 |
| Grant date | Feb 15, 1994 |
| Priority date | — |
| Expiry date | Jan 7, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R19/0092
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A circuit for measuring current in a power MOS transistor (M0) comprises second (M1) and third (M2) transistors in series of the same type and same technology as, but having a smaller surface than, the power transistor and arranged in parallel on the latter. The two series transistors have their gates connected to the gate of the power transistor. The current in transistor (M2) which is connected to the reference electrode of the power transistor is measured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.