Submicron isolated, released resistor structure
US5287082A · kind A · utility
19Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1992 |
| Grant date | Feb 15, 1994 |
| Priority date | — |
| Expiry date | Jul 2, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
Abstract
A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to produce a resistive island. The island is then isolated from the substrate by oxidation, and is released by removing the oxide to produce an isolated, released resistor beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.