Independently addressable semiconductor diode lasers with integral lowloss passive waveguides
US5287376A · kind A · utility
42Cited by
9References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 14, 1992 |
| Grant date | Feb 15, 1994 |
| Priority date | — |
| Expiry date | Dec 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Within a monolithic semiconductor structure, passive waveguides couple laterally offset generation waveguides for generating light waves to mirrors. The passive waveguides can also couple detecting regions for measuring the light intensity within the laser cavity and adjustable absorption regions for tuning the wavelength of the lightwaves generated by the generation waveguides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.