Chemical vapor deposition apparatus of in-line type
US5288329A · kind A · utility
27Cited by
6References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 20, 1990 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Nov 20, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/0245
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An in-line type chemical vapor deposition apparatus having an etching device for cleaning at least substrate holders, which is provided downstream of the substrate unloading station in which the processed substrates are removed from the substrate holders at atmosphere pressure. The etching device comprises a plasma etching means in which the substrate holders are positioned on an anode side or a dry-etching means in which the substrate holders are positioned on a cathode side, thereby reducing the down time of the apparatus without any influence of an exfoliation of an adhered film from the substrate holders or other portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.