Silicon nitride thin films with improved properties
US5288527A · kind A · utility
26Cited by
9References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 21, 1991 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Nov 21, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/153
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for preparing silicon nitride films with improved properties and characterized by a limited concentration of hydrogen atoms, a high index of refraction, resistance to attack by a hydrofluoric solution, prevention of diffusion of alkalines and oxygen, and good dielectric properties such as optical gap. The process of preparation uses plasma CVD with ammonia. The invention can be applicable to flat screens, TFT transistors and functional glazings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.