Process for forming self-aligned titanium silicide by heating in an oxygen rich environment
US5288666A · kind A · utility
18Cited by
22References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 21, 1990 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Mar 21, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing self-aligned titanium silicide. A silicon substrate is provided, silicon electrode and oxide insulator regions are formed on the substrate, and a titanium layer overlying the electrode and insulator regions is formed. The device is heated in an oxygen rich environment to form titanium silicide overlying the electrode regions and to form titanium oxide overlying the insulator regions and metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.