Structure of a semiconductor chip having a conductive layer
US5288948A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 1991 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Dec 26, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to prevent the occurrence of corrosion due to the sliding of a relatively wide aluminum conductive layer (12) such as a power source conductive layer or a ground conductive layer, formed on a semiconductor substrate (11), breakage of a lower conductive layer due to the sliding of an upper aluminum conductive layer (12) in case of a multilayer interconnection, and the creation of voids in the lower aluminum conductive layer due to the moisture beneath the relatively wide metal conductive layer in case of a multi layer interconnection etc., the conductive layer structure is constructed so that the conductive layer (12) relatively great in width is divided into several conductive layer portions and so that the width of each of the divided conductive layer portions is in a range of 10 .mu.m to 40 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.