High power semiconductor device with integral on-state voltage detection structure
US5289028A · kind A · utility
6Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1991 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Nov 4, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device having a power switch (12) and a saturation detection diode (13) formed in an upper surface of a semiconductor drift region (11) is provided. The saturation detector diode (13) and the power switch (12) are electrically coupled by the drift region (11). An external signal applied to the detector diode (13) forward biases the detector diode (13) when the drift region (11) potential is below a predetermined voltage and the detector diode (13) becomes reverse biased when the drift region (11) potential is greater than the predetermined voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.