Output gate for a semiconductor IC
US5289061A · kind A · utility
2Cited by
8References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1992 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Aug 26, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/018521
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An output gate according to the present invention includes a CMOS gate composed of a P-MOS transistor connected at a source to an external power supply and a first N-MOS transistor connected at a source to ground, and a second N-MOS transistor connected between ground and the first N-MOS transistor by a source-drain path. The second N-MOS transistor is connected at a gate to an external power supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.