Microelectronic ballistic transistor
US5289077A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 1992 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Jan 27, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J21/105
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A vacuum microelectronic transistor which can operate at a high speed and has a high mutual conductance. The vacuum microelectronic transistor comprises an emitter for emitting electrons therefrom, a collector for receiving electrons from the emitter, and a pair of gate electrodes for controlling arrival of electrons from the emitter to the collector. The emitter and collector are disposed in an encapsulated condition on a substrate such that electrons emitted from the emitter run straightforwardly in vacuum to the collector while the gate electrodes are located adjacent and across a route of such electrons from the emitter to the collector. Also, a process of manufacturing such vacuum microelectronic transistor is disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.