Read only memory for storing multi-data
US5289406A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1991 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Aug 13, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A read only memory includes a memory cell provided at an intersection between a word line and a bit line, and a plurality of reference potential transmission lines each receiving a reference potential determined in accordance with an externally applied potential designating signal. The memory cell includes a transistor element having a gate coupled to a word line, a drain coupled to a bit line and a source which is coupled to one of the reference potential transmission lines or is held in an open state. Stored data in the memory cell is changed by switching the potentials of the reference potential transmission lines. This enables storing of different data bits in one memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.