Bipolar transistor memory cell and method
US5289409A · kind A · utility
30Cited by
11References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1993 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Jun 7, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4113
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Bipolar transistor memory cell and method for use in a random access memory. A pair of state elements are cross coupled so that they assume opposite states in accordance with signals applied thereto, a pair of bipolar pass transistors are connected to respective ones of the state elements for applying signals to the state elements, and current flow through the pass transistors is monitored to determine the states of the state elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.