Semiconductor luminous element and superlattice structure
US5289486A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1993 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Apr 29, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/761
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor luminous element has cladding layers on both sides of its active layer; and it has a multi-quantum barrier layer which is in contact with the active layer on at least a portion of at least one of the cladding layers. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer. A superlattice structure for semiconductor devices, which confines electrons and holes, is formed out of the active layer and a cladding layer provided on at least one side of that active layer. A multi-quantum barrier layer is in contact with the active layer on at least a portion of the cladding layer. This multi-quantum barrier layer is formed of an alternating stack of superlattice barrier layers and superlattice well layers. The energy gap of the well layers is smaller than that of the active layer, and the quantized energy gap of the multi-quantum barrier layer is larger than the energy gap of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.