Distributed feedback semiconductor laser
US5289494A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1992 |
| Grant date | Feb 22, 1994 |
| Priority date | — |
| Expiry date | Jun 17, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention relates to a distributed feedback semiconductor laser which achieves distributed feedback by gain coupling by providing periodical changes in the thickness of the active layer (5) or the absorptive layer, and aims to achieve light distributed feedback mainly of periodical perturbation of the gain factor by diminishing the periodical perturbation of refractive index caused by the changes in the thickness of the active layer (5) or the absorptive layer. This invention is characterized by a refractive index canceling structure comprising a combination of layers (6) and (7) of different refractive indices to cancel periodical changes in refractive index caused by the periodical structure of the active layer (5) or the absorptive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.