Bilayer resist and process for preparing same
US5290397A · kind A · utility
15Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1992 |
| Grant date | Mar 1, 1994 |
| Priority date | — |
| Expiry date | Aug 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A resist pattern on a substrate is formed using an imageable resist layer on the surface of a substrate. The imageable resist layer comprises a silicon-incorporated polystyrene-diene block copolymer having a silicon weight percent of at least about 5 percent. The imageable layer is prepared by reacting a polystyrene-diene block copolymer with a silicon-containing compound in the presence of a platinum catalyst. In a preferred embodiment, the poly(styrene)-diene block copolymers are hydrosilylated by hydrosiloxanes using a platinum-divinyl tetramethyl disiloxane catalyst.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.