Method of making complementary heterostructure field effect transistors
US5290719A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1992 |
| Grant date | Mar 1, 1994 |
| Priority date | — |
| Expiry date | Oct 2, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
Abstract
Complementary heterostructure field effect transistors (30) with complementary devices having complementary gates (40, 50) and threshold adjusting dopings are disclosed. Preferred embodiment devices include a p.sup.+ gate (50) formed by diffusion of dopants to convert n.sup.+ gate material to p.sup.+, and a pulse-doped layer adjacent the two-dimensional carrier gas channels to adjust threshold voltages. Further preferred embodiments have the conductivity-type converted gate (50) containing a residual layer of unconverted n.sup.+ which cooperates with the pulse-doped layer threshold shifting to yield threshold voltages which are small and positive for n-channel and small and negative for p-channel devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.