Non-volatile storage device with impurities in nitride toward source side
US5291048A · kind A · utility
8Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 19, 1992 |
| Grant date | Mar 1, 1994 |
| Priority date | — |
| Expiry date | May 19, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-volatile storage device such as an EPROM (erasable programmable read only memory) and a method of manufacturing the same. A silicon oxide film, a silicon nitride film and a silicon oxide film are formed one after another on a gate region of a semiconductor substrate in which a source region and a drain region are formed. To restrict carrier capture to the silicon nitride film near the source region, impurity ions such as hydrogen ions are mixed with the silicon nitride film at a side toward the source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.