Semiconductor device and method of fabricating semiconductor device
US5291065A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1992 |
| Grant date | Mar 1, 1994 |
| Priority date | — |
| Expiry date | Dec 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A patterned first metal plate (310)is joined to an upper surface of a first ceramic substrate (301), and a second metal plate (330) is joined to an emitter electrode (310E) of the first metal plate (310) through a second ceramic substrate (320). Power devices (4) are mounted on a collector electrode (310C) of the first metal plate (310), and control devices (5) are mounted on the second metal plate (330). The emitter electrode (310E) of a metal layer lies between a high-voltage circuit having the first metal plate (310) and power devices (4) and a control (low-voltage) circuit having the control devices (5) and second metal plate (330). The emitter electrode (310E) serves as a shielding material, and the electrostatic shielding effect prevents noises applied to the high-voltage circuit from being led to the control circuit, so that the faulty operations of the control devices (5) are prevented and the reliability of the semiconductor device is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.