Semiconductor laser amplifiers
US5291328A · kind A · utility
5Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1991 |
| Grant date | Mar 1, 1994 |
| Priority date | — |
| Expiry date | Aug 1, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/5009
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser amplifier includes both a waveguide layer and an active layer. In use, an optical wave in the active layer interacts with the waveguiding layer to reduce the polarisation sensitivity of the amplifier. A short, thick active layer is not required, typical dimensions being 250 or 500 .mu.m long, by 0.2 .mu.m high. The mesa is typically about 2 .mu.m wide, but may be wider.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.