Blue-green laser diode
US5291507A · kind A · utility
45Cited by
14References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1992 |
| Grant date | Mar 1, 1994 |
| Priority date | — |
| Expiry date | Apr 23, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A II-VI compound semiconductor laser diode includes a N-type GaAs substrate, a first cladding layer of N-type ZnSSe overlaying the substrate, a first guiding layer of N-type ZnSe semiconductor overlaying the first cladding layer. A quantum well layer of strained CdZnSe semiconductor overlaying the first guiding layer, a second guiding layer of p-type ZnSe semiconductor overlaying the quantum well layer, and a second cladding layer of p-type ZnSSe semiconductor overlaying the second guiding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.