Ceramic thin film memory device
US5293335A · kind A · utility
66Cited by
13References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1992 |
| Grant date | Mar 8, 1994 |
| Priority date | — |
| Expiry date | Dec 9, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A digital memory circuit for electronic applications. The circuit has at least one memory element connected in series with a load resistor. The digital memory circuit also includes a voltage supply and a data output terminal. The memory element in the digital memory circuit is in the form of a silicon dioxide film derived from a hydrogen silsesquioxane resin. The silicon dioxide film is characterized by a jV curve which includes both resistive and conductive regions for the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.