Process for forming a thin film of silicon
US5294286A · kind A · utility
203Cited by
25References
34Claims
0Family size
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Key dates
| Filing date | Jan 12, 1993 |
| Grant date | Mar 15, 1994 |
| Priority date | — |
| Expiry date | Jan 12, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The thickness of a thin film of an element semiconductor may be determined by counting the number of cycles of gaseous component introductions within a crystal growth vessel. Each cycle permits at most one monolayer of growth since the pressure in the vessel during gaseous component introduction is maintained under a saturation condition. The temperature to which a substrate in the vessel is heated is that for which epitaxial growth results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.