Semiconductor light emitting device with terraced structure
US5294815A · kind A · utility
21Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | Jul 21, 1992 |
| Grant date | Mar 15, 1994 |
| Priority date | — |
| Expiry date | Jul 21, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/099
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device able to emit a high intensity, stable light. An edge surface lighting type light emitting diode array is formed on a substrate. A light emitting edge surface of each light emitting element is formed by an etching method. A surface of the substrate in front of the light emitting edge surface is formed in multiple stage so that a light beam is not reflected by the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.