Field-effect transistor
US5294820A · kind A · utility
23Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 1992 |
| Grant date | Mar 15, 1994 |
| Priority date | — |
| Expiry date | Feb 7, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
Abstract
A field-effect transistor comprising a semiconductor substrate having source and drain regions and a gate electrode, wherein a thin organic film including donor and acceptor molecules is provided between the semiconductor substrate and the gate electrode. When a predetermined voltage is applied to the gate electrode, charge transfer occurs between the donor and acceptor molecules included in the thin organic film, thereby controlling the surface potential of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.