Patent · US Expired

Production of Si.sub.2-x P.sub.x N.sub.2+x (NH).sub.1-x, where x=0.1 to 1.0

US5296211A · kind A · utility

4Cited by
1References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 6, 1993
Grant dateMar 22, 1994
Priority date
Expiry dateJan 6, 2013

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC01P2002/72
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

The present invention relates to a process for the production of low-needle silicon nitride of high .alpha.-content, wherein an amorphous nitrogen-containing silane compound is mixed with a crystalline or amorphous compound comprising the elements silicon, phosphorus and nitrogen to form a mixture which is heat-treated at temperatures above 1000.degree. C. to form the low-needle silicon nitride. The present invention also relates to the silicon-, nitrogen- and phosphorus-containing compound which is used as the starting material in the process for the production of the low-needle silicon nitride, and the process for the production of the silicon-, nitrogen- and phosphorus-containing compound.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.