Method of manufacturing a contact of a highly integrated semiconductor device
US5296400A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1992 |
| Grant date | Mar 22, 1994 |
| Priority date | — |
| Expiry date | Dec 11, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When contacting a bit line and a charge storage electrode to a source/drain of the MOS transistor during a manufacturing process of a highly integrated semiconductor device, a contact pad is formed by filling up polysilicon into a contact hole that had been made using a self-align method in order not to damage the word line or the bit line as a result of a small processing margin during a contact hole forming process. Also, the occurrence of a topological difference during a semiconductor manufacturing process is minimized by forming an oxide layer such as SOG, BPSG, TEOS, and PECVD oxide over the top of the field oxide for a flattening effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.