Semiconductor laser device including a gallium-aluminum arsenic compound
US5297158A · kind A · utility
26Cited by
3References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1992 |
| Grant date | Mar 22, 1994 |
| Priority date | — |
| Expiry date | Apr 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor laser device, a Ga.sub.1-y Al.sub.y As cladding layer of a conduction type is provided on at least one principal plane of an active layer, while a Ga.sub.1-Z Al.sub.Z As current blocking layer of the other conduction type is provided on the cladding layer and has a stripe-like window. The AlAs mode fractions Y and Z has a relation, Z>Y. The semiconductor laser device has low noises and a low operating current value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.