Method and apparatus for linear magnetron sputtering
US5298137A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 1, 1992 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Oct 1, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An emission enhanced sputtering magnetron apparatus includes an elongated rod or bar like cathode jacketed by a target material. An electron emission enhancement device positioned around the end of the elongated cathode creates a thin, highly uniform plasma sheath along the remainder of the cathode, thereby enhancing the sputtering rate along the entire length of the cathode target material. A low voltage, high current AC or DC magnet supply connected across the elongated cathode generates a plasma-confining magnetic field circumferentially around the entire length of the cathode. In an alternate embodiment, a single elongated tube or bar of the target material can be conformed into the cathode, the electron emission enhancing device, and a working end portion that can be formed into nearly any shape to conform to the shape of the surface being coated with the target material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.