Titanium-tungsten target material and manufacturing method thereof
US5298338A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 16, 1992 |
| Grant date | Mar 29, 1994 |
| Priority date | — |
| Expiry date | Jul 16, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A titanium-tungsten target material used to form, by sputtering, a barrier metal or the like for use in semiconductor devices. The titanium-tungsten target material is substantially composed of tungsten particles and a titanium-tungsten alloy phase surrounding the tungsten particles. The area ratio at which tungsten grains occupy in a cross section of the titanium-tungsten target material is, preferably, not more than 15%, more preferably, not more than 10%. If the average crystal grain size of the target material is not more greater 15 .mu.m, a uniform thin film can be obtained by sputtering. The target material can be obtained by sintering a titanium powder and a tungsten powder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.